Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications
نویسندگان
چکیده
منابع مشابه
Epitaxial growth of three-dimensionally architectured optoelectronic devices.
Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would...
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ژورنال
عنوان ژورنال: Journal of Electrical Engineering
سال: 2011
ISSN: 1335-3632
DOI: 10.2478/v10187-011-0015-1